Strain-induced resistance anisotropy near the FQHE v=5/2 in two-dimensional GaAs single quantum wells

ORAL

Abstract

We report strain-dependent low temperature magnetotransport measurements of a two-dimensional electron gas (2DEG) confined in GaAs single quantum wells. The samples are mounted to a piezoelectric-based strain device with which we can, in situ, apply and vary tensile strain. With this apparatus, we have achieved strain as large as ~0.5% in GaAs quantum wells at cryogenic temperatures. We find that increasing strain causes the magnetoresistance of the 2DEG confined in the quantum well to become anisotropic near the filling factor v = 5/2. Additionally, we find that the effects of strain are highly dependent on the magnitude of the magnetic field applied. These anisotropic states are metastable and resume an isotopic state after a temperature dependent decay.

*The work at UC Irvine is supported by NSF Grant No. DMR- 1350122

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Presenters

  • Alexander Stern

    • Max Planck Inst

Authors

  • Alexander Stern

    • Max Planck Inst

  • Brian Casas

    • Department of Physics and Astronomy, University of California Irvine

  • Johannes Pollanen

    • Department of Physics and Astronomy, Michigan State University
    • Michigan State Univ

  • James Eisenstein

    • Department of Physics, California Institute of Technology
    • physics, Caltech

  • Kenneth West

    • Princeton University
    • Electrical Engineering, Princeton University
    • Electrical engineering, Princeton university
    • Princeton Univ
    • Department of Electrical Engineering, Princeton University
    • electrical engineering, Princeton
    • Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

  • Loren Pfeiffer

    • Princeton University
    • Electrical Engineering, Princeton University
    • Electrical engineering, Princeton university
    • Princeton Univ
    • Department of Electrical Engineering, Princeton University
    • electrical engineering, Princeton
    • Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

  • Jing Xia

    • University of California, Irvine
    • Department of Physics and Astronomy, University of California Irvine