Magnetic anisotropy in a single crystal antiferromagnetic thin film
ORAL
Abstract
Antiferromagnetic (AF) materials promise to show magnetization dynamics, including switching, at ultra-high frequency and thus are of immense interest for next generation memory and logic applications. Besides, spin waves in AF insulators propagate very efficiently. However, electrically reading the states of the AF materials is not easy. Recently, spin Hall magnetoresistance (SMR) has been identified as one of the promising ways to access the surface states of the AF insulators. In this work, we deposit α-Fe2O3 (200 nm)/Pt (6 nm) on (11-20) Al2O3. We measure SMR of Pt Hall bar on Fe2O3. Below Morin transition temperature, we observe positive and negative magnetoresistance in the Pt/Fe2O3 bilayers depending on the direction of the electrical currents at the spin flop transition. This identifies that SMR can clearly determine the anisotropy of thin film AF insulators. We will show the detail study of the dependence of magnetoresistance on angular fields at different temperatures. Our study reveals important physical phenomena in AF Fe2O3 thin film.
*This work was supported by the Department of Energy, Office of Science, Materials Science and Engineering Division and by the NSF through U of Illinois at Urbana-Champaign Materials Research Science and Engineering Center DMR-1720633.
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Presenters
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Saima Siddiqui
- University of Illinois at Urbana-Champaign