Purcell Enhancement of a Cavity-Coupled Single Spin Defect in Silicon Carbide
ORAL
Abstract
Silicon carbide (SiC) has recently been developed as a platform for optically addressable spin defects in the form of the neutral divacancy, most notably in the 4H polytype [1-3]. Here we present the Purcell enhancement of a single divacancy coupled to a photonic crystal cavity. We use a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5000. This corresponds to a Purcell factor of ~50 for a divacancy within the cavity mode and results in an increased photoluminescence into the zero-phonon line (ZPL) when on resonance with the cavity, as well as a shortened excited state lifetime. Additionally, we observe coherent control of the divacancy ground state spin inside of the cavity nanostructure. This system represents a major advance towards applications for the scalability of long-distance entanglement protocols using SiC that require the interference of indistinguishable photons from spatially separated single qubits.
*This work is supported by AFOSR, ARO, NDSEG, NSF, and UChicago MRSEC.
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Presenters
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Alexander Crook
- Pritzker School of Molecular Engineering, University of Chicago
- Department of Physics, University of Chicago
- University of Chicago