Device development and characterization of Er doped epitaxial Y2O3 on Silicon platform
ORAL
Abstract
Spin-optical interface in rare-earth ions enables storage of optical quantum information in the long-lived nuclear spin levels. Er3+ has an optical excitation that matches the telecom transmission wavelength, making it technologically attractive. Further, very narrow transition linewidths and high spectral stability in Er3+ has been demonstrated when embedded in a crystalline host making it an ideal candidate for solid state quantum memory. Using molecular beam epitaxy (MBE), we demonstrate the growth and characterization of high quality single crystal thin films of Er:Y2O3 on Si 111 and Si 100. Photoluminescence (PL) and EPR show substitution of Er at Y sites. PL linewidths of 7.9 GHz and 6 GHz for the 1536 nm transition are obtained at 4 K and 7 mK, respectively. We will discuss the role of the microstructure, buffer layers, isotopic purity (Er 167), and Er3+ proximity to the interfaces on the optical linewidths. Finally, we report the optical transition lifetime, optical and spin coherence lifetimes on the devices fabricated on this platform. Q values for microdisk resonators and loss (db/cm) in optical waveguides will also be presented.
*Part of the work was funded by EFRC funds through the Department of Energy
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Presenters
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Manish Kumar Singh
- Pritzker School of Molecular Engineering, University of Chicago
- University of Chicago