Tracking interfacial disorder in SiGe qubit material
ORAL
Abstract
Theory predicts quantum dot electrons interact with interface atomic-scale disorder, perturbing energetics, creating new potentially useful states, and adding complexity that could dictate viability of some future qubit technologies. Although profoundly impactful, the predictions are challenging to test, since relevant structures are difficult to measure and correlate with qubit behavior. We've measured atomic step disorder at Si/SiGe interfaces using scanning tunneling microscopy coupled to an epitaxial growth tool. We report a counterintuitive evolution of roughness and step spatial correlations during growth. The results are meaningful toward elucidating structure-function relationships in SiGe QDs.
*This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE’s National Nuclear Security Administration under contract DE-NA-0003525. The views expressed in the article do not necessarily represent the views of the U.S. DOE or U.S. Government.
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Presenters
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Luis Fabian Pena
- Sandia National Laboratories