On the nature of carrier states around the fermi level at the LAO/STO interface

ORAL

Abstract

We propose a minimal tight-binding one-band model for the interface layer of LAO/STO consisting of “effective” carriers (of Ti-dxy character) in random magnetic fields. These fields result from the hybridization of Ti-d(eg)-bands and oxygen vacancies at the LAO/STO interface and can be seen as local moments (i.e. “effective impurities”) located at the Ti-site. Both the effects of a nonmagnetic on-site potential and the exchange interactions (Zeeman like) between carrier and magnetic impurities are taken into account. We apply the coherent potential approximation in studying this system.

*TRR80: From Electronic Correlations to Functionality, Transregional research center of the German Research Foundation (DFG)

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Presenters

  • Tobias Strobl

    • Chair for Theoretical Physics III, Augsburg University

Authors

  • liviu chioncel

    • Augsburg University
    • Institute of Physics, University of Augsburg
    • Chair for Theoretical Physics III, Augsburg University

  • Tobias Strobl

    • Chair for Theoretical Physics III, Augsburg University

  • Patrick Sailer

    • Chair for Experimental Physics VI, Augsburg University

  • Daniel Braak

    • Max Planck Institute for Solid State Research, Stuttgart

  • Thilo Kopp

    • Chair for Experimental Physics VI, Augsburg University