Enhanced Zeeman splitting in MoS<sub>2 </sub>monolayers doped with transition metals.
ORAL
Abstract
We developed an approach to dope MoS2 monolayers with controllable concentration of transition metal ions. In this approach, a single phase transition metal-doped MoO3 compound precursor was utilized to deposit ultrathin doped MoO3 film by electron beam evaporation, followed by sulfurization of the precursor oxide layer to achieve monolayer transition metal doped MoS2.
We have used magneto-reflectance spectroscopy to compare the Zeeman splitting of MoS2 monolayers with that of MoS2 doped with transition metals. At T = 7K we find that the A-exciton Zeeman splitting in the doped sample is 23% higher that of the undoped MoS2. The enhancement is attributed to exchange interaction between the spins of carriers and those of the transition metal ions.
We have used magneto-reflectance spectroscopy to compare the Zeeman splitting of MoS2 monolayers with that of MoS2 doped with transition metals. At T = 7K we find that the A-exciton Zeeman splitting in the doped sample is 23% higher that of the undoped MoS2. The enhancement is attributed to exchange interaction between the spins of carriers and those of the transition metal ions.
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Presenters
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Arinjoy Bhattacharya
- Department of Physics, State University of New York at Buffalo, Buffalo, New York
- Physics, State Univ of NY - Buffalo, Buffalo, New York