Gate-tunable magnetism in vanadium-doped tungsten diselenide monolayer

Controlling magnetic properties by tuning carrier concentration is a key feature of diluted ferromagnetic semiconductors, giving possibilities for multifunctional spintronic devices. Here, we investigate the gate-modulation of the long-range magnetic order in p-type vanadium-doped WSe₂ monolayer by both experiments and simulations. We found that a transition from the long-range ferromagnetic order to the short-range antiferromagnetic order can be tuned by injecting electrons to compensate for the p-doping effect of vanadium by density functional calculations. The magnetic domains observed by magnetic force microscopy are strongly modulated by applying gate biases. Our findings propose the strong coupling between charge and spin order in vanadium-doped WSe₂, opening possibilities for using two-dimensional semiconductors for spintronic devices.