Correlated Insulators in Twisted Double Bilayer Graphene
ORAL
Abstract
We present a combined experimental and theoretical study of twisted double bilayer graphene with twist angles near 1°. Consistent with moiré band structure calculations, we observe insulators at integer moiré band fillings one and three. Within windows of finite transverse electric fields, the first moiré conduction band is separated from neighboring bands, and we observe correlated insulators at 1/4, 1/2, and 3/4 band filling. The insulators at 1/4 and 3/4 filling emerge in a parallel magnetic field, whereas the resistance at half band filling is weakly dependent on parallel magnetic field. These findings suggest that correlated insulators are favored when a moiré flat band is spectrally isolated, with spin polarization at 1/4 and 3/4 band fillings, and valley polarization at 1/2 band filling.
*This work was supported by the National Science Foundation grant EECS-1610008, Army Research Office under Award W911NF-17-1-0312, and the Welch Foundation. Work was partly done at the Texas Nanofabrication Facility supported by NSF grant NNCI-1542159. K. W. and T. T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and JSPS KAKENHI Grant Numbers JP15K21722.
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Presenters
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Gregory William Burg
- The University of Texas at Austin