Relaxation Effects in the Electronic Structure of Twisted Bilayer Graphene: a Multi-Scale Approach

ORAL

Abstract

We introduce a multi-scale approach to obtain accurate atomic and electronic structures for atomically relaxed twisted bilayer graphene. High-level exact exchange and random phase approximation (EXX+RPA) correlation data provides the foundation to parametrize systematically improved force fields for molecular dynamics simulations that allow relaxing twisted layered graphene systems containing millions of atoms making possible a fine sweeping of twist angles. These relaxed atomic positions are used as input for tight-binding band-structure calculations where the distance & angle-dependent interlayer hopping terms are extracted from ab-initio calculations & subsequent representation with Wannier orbitals. We benchmark our results against published force fields and widely used tight-binding models and discuss their impact in the spectrum around the flat band energies. We find that our relaxation scheme yields a magic angle of twisted bilayer graphene consistent with experiments between 1.0o∼1.1o using Fermi velocities υF≈1.0∼1.1×106 m/s. We present high-resolution spectral function calculations to compare with experimental ARPES.

*Acknowledges the grant NRF-2018R1C1B6004437 (for N.L), KRF-2016H1D3A1023826 (for N.L), NRF-2016R1A2B4010105 (for J.A) & SSTF-BAA1802-06 (for S. J. & J. J).

Presenters

  • Srivani Javvaji

    • Physics, University of Seoul

Authors

  • Nicolas Leconte

    • Department of Physics, University of Seoul
    • Physics, University of Seoul
  • Srivani Javvaji

    • Physics, University of Seoul
  • Jiaqi An

    • Physics, University of Seoul
  • Jeil Jung

    • Physics, University of Seoul