Demonstration of two-dimensional hole gases (2DHG) in strained GeSn quantum wells

ORAL

Abstract

In this work, capacitively induced two-dimensional hole gases in undoped Ge/GeSn heterostructures were demonstrated. Ge/GeSn heterostructures with Sn fractions of 6%, 9% and 11% were grown by chemical vapor deposition with surface roughness below 3 nm. Hall bar devices were fabricated and characterized at 4 K. Density saturation was observed and the highest mobility was 1.9x104 cm2/Vs. The dominant scattering mechanism is likely background impurity scattering. Shubnikov-de Haas oscillations and the quantum Hall effect were observed at B > 1 T, indicating high-quality material growth of Ge/GeSn heterostructures. Effective masses were extracted by the temperature-dependent SdH oscillations.

*This work at NTU was supported by MOST (107-2112-M-002-014- and 108-2112-M-002-011-) and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy (DOE), Office of Basic Energy Sciences user facility. Sandia National Labs is managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a subsidiary of Honeywell International, Inc., for the U.S. DOE’s National Nuclear Security Administration under contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.

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Presenters

  • Cheng-Yu Lin

    • Natl Taiwan Univ

Authors

  • Chia-Tse Tai

    • Natl Taiwan Univ

  • Cheng-Yu Lin

    • Natl Taiwan Univ

  • Chia-You Liu

    • Natl Taiwan Univ

  • Tz-Ming Wang

    • Natl Taiwan Univ

  • Charles Harris

    • Sandia National Laboratories
    • Sandia National Laboratories, Center for Integrated Nanotechnologies

  • Tzu-Ming Lu

    • Sandia National Laboratories
    • Sandia National Laboratories, Center for Integrated Nanotechnologies

  • Jiun-Yun Li

    • Natl Taiwan Univ