Local Magnetic Field Effect on InSb Nanowire Devices
ORAL
Abstract
Devices based on InSb nanowires are platforms for various of experiments, including quantum point contacts, quantum dots and Majorana zero modes. In most of such experiments, when a magnetic field is necessary, a large superconducting solenoid magnet is used to produce a global field. However, this homogenous magnetic field may limit device architecture. Instead of producing a global magnetic field, we can produce magnetic field locally by placing micro-magnets beside nanowire devices. In our experiment, we fabricate CoFe micromagnets next to InSb nanowire devices which also have Ti/Au ohmic contacts. Hysteretic magnetoresistance with sharp switches is observed, indicating penetration of local magnetic field from CoFe micromagnets into the nanowire. We also estimate that the magnitude of the local magnetic field into the InSb nanowire is several tens of mT. This successful demonstration of local magnetic field effect may bring a new approach for scalable topological computing.
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Presenters
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Yifan Jiang
- Univ of Pittsburgh