Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors

ORAL

Abstract


We have measured a helicity-dependent photocurrent at zero external magnetic field in a device based on a semiconductor quantum well embedded in a p-i-n junction. The device is excited under vertical incidence with circularly polarized light. The spin filtering effect is evidenced in the temperature range 77–300 K owing to a CoFeB/MgO spin filter with out-of-plane magnetization in remanence. The helicity-dependent photocurrent is explored as a function of the temperature and bias. These characteristics are compared with those of a spin
photocurrent device with in-plane magnetized CoFeB/MgO spin filter, excited under oblique incidence with circularly polarized light. In contrast to the in-plane spin filter device, the circularly polarized light asymmetry of the photocurrent in the out-of-plane device depends weakly on the external bias. The two devices are sensitive to the spin filtering of either the in-plane (Sx) or out-of-plane (Sz) photogenerated electron spin in the semiconductor quantum well. The photocurrent results can be explained by the Dyakonov-Perel electron spin-relaxation mechanism. Our study reveals the large spin relaxation anisotropy in III-V zinc-blende quantum wells in the presence of a vertical electric field. [1] Phys. Rev. B 100, 045417 (2019)

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Presenters

  • Pierre Renucci

    • Institut National des Sciences Appliquees de Toulouse

Authors

  • Pierre Renucci

    • Institut National des Sciences Appliquees de Toulouse

  • Xiaodi Xue

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Laipan Zhu

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Wei Huang

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Yu Liu

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Yang Zhang

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Xiaolin Zeng

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Jing Wu

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Bo Xu

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Zhanguo Wang

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Yonghai Chen

    • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials

  • Weifeng zhang

    • Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China

  • Xavier Marie

    • CNRS/INSA
    • Institut National des Sciences Appliquees de Toulouse
    • INSA-Toulouse
    • LPCNO, University of Toulouse

  • Yuan LU

    • Institut Jean Lamour, Nancy, France
    • Université de Lorraine, Institut Jean Lamour, UMR CNRS 7198, campus ARTEM, 2 Allée André Guinier, 54011, Nancy, France