Experimental and numerical studies of near-field infrared phenomena at nanometer length scales

ORAL

Abstract

Broadband near-field infrared spectroscopy is fast emerging as a valuable experimental probe of nanomaterials. Light-matter interactions in polaritonic materials at nanometer length scales can be probed effectively with this experimental technique. When there is strong coupling of light to the probe-sample system in highly polar materials such as insulating SrTiO3, the phonon-polariton resonances should be described by detailed numerical simulations. More generally, experimental data needs to be accurately modeled to obtain optical properties at nanometer length scales in non-trivial geometries such as multilayered samples (for example, insulating SrTiO3 crystal with metallic surface), and materials with physical boundaries comparable to the probe apex (for example, nano-platelets of Cu2S). Near-field infrared spectra of materials with anisotropic dielectric function can also be modeled numerically (for example, rutile TiO2). We will present our results on the materials described above, thereby establishing the efficacy of detailed numerical simulations for analyzing experimental spectra.

*M.M.Q. acknowledges support from ETRI and the National Science Foundation (NSF). Simulation work was performed, in part, using computing facilities at the College of William and Mary.

Presenters

  • P. McArdle

    • Department of Physics, College of William & Mary
    • Department of Physics, College of William and Mary

Authors

  • P. McArdle

    • Department of Physics, College of William & Mary
    • Department of Physics, College of William and Mary
  • D. Lahneman

    • Department of Physics, College of William & Mary
    • Department of Physics, College of William and Mary
  • H. Jiang

    • Department of Physics, College of William & Mary
    • Department of Physics, College of William and Mary
  • M. M. Qazilbash

    • Department of Physics, College of William & Mary
    • Department of Physics, College of William and Mary
  • T. Slusar

    • Metal-Insulator-Transition Laboratory, Electronics and Telecommunications Research Institute (ETRI)
    • Metal-Insulator Transition Laboratory,Electronics and Telecommunications Research Institute
  • H.-T. Kim

    • Metal-Insulator-Transition Laboratory, Electronics and Telecommunications Research Institute (ETRI)
    • ETRI
    • Metal-Insulator Transition Laboratory,Electronics and Telecommunications Research Institute
  • A. Biswas

    • Department of Physics, University of Florida
    • Department of Physics, University of Florida, Gainesville, FL 32611
  • F. Keilmann

    • Fakultät für Physik & Center for NanoScience (CeNS), Ludwig-Maximilians-Universität
  • J. Chen

    • Department of Chemistry and Biochemistry, University of Arkansas