Operation of a four-qubit device in isotopically enriched Si/SiGe
ORAL
Abstract
Quantum processors based on electron spins in silicon are rapidly becoming a strong contender in the race to build a quantum computer. Over the past few years, quantum-dot spin qubits have been shown to offer high fidelity single-qubit [1] and two-qubit [2-5] control at levels approaching the fault tolerant threshold. However, most experiments have been conducted in one-qubit, or two-qubit devices. Recently, we have demonstrated operation of a four-qubit device in isotopically enriched Si/SiGe [6]. Here we outline improvements to our four-qubit device design and present new data on one- and two-qubit operation in the device including recent randomized benchmarking results.
[1] Yoneda et al., Nat. Nanotech. 13, 102 (2018)
[2] Zajac et al., Science 359, 439 (2018)
[3] Watson et al., Nature 555, 633 (2018)
[4] Huang et al., Nature 569, 532 (2019)
[5] Xue et al., Phys. Rev. X 9, 021011 (2019)
[6] Sigillito et al., Phys. Rev. Applied 6, 061006 (2019)
[1] Yoneda et al., Nat. Nanotech. 13, 102 (2018)
[2] Zajac et al., Science 359, 439 (2018)
[3] Watson et al., Nature 555, 633 (2018)
[4] Huang et al., Nature 569, 532 (2019)
[5] Xue et al., Phys. Rev. X 9, 021011 (2019)
[6] Sigillito et al., Phys. Rev. Applied 6, 061006 (2019)
*We thank L. F. Edge and M. Borselli of HRL Laboratories for providing the isotopically enriched heterostructure. Research sponsored by ARO grant No. W911NF-15-1-0149 and the Gordon and Betty Moore Foundation's EPiQS Initiative through grant GBMF4535. Devices were fabricated in the Princeton University Quantum Device Nanofabrication Laboratory.
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Presenters
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Anthony Sigillito
- Princeton University