Strain Dependent Characterization of Flexible BaSnO<sub>3 </sub>Nanomembranes

ORAL

Abstract

Doped BaSnO3 is a wide band-gap semiconductor that is known to exhibit high electron mobility at room temperature, showing great prospects as an alternative transparent conducting oxide to the industry standard indium-tin-oxide. Flexible transparent conducting oxides are of special interest for future photonics and optoelectronic devices but realizing high-quality films as flexible materials has been a challenge. In this work, we will discuss our efforts to fabricate nanometer thick, freestanding La-doped BaSnO3 film that are highly conducting and transparent using a water-soluble and lattice matched Ba3Al2O6 buffer layer1. Using this technique, we can transfer the nanomembranes onto a flexible device platform and characterize the physical and electronic properties of La-doped BaSnO3 as a function of strain.

1P. Singh, A. G. Swartz, D. Lu, S. S. Hong, K. Lee, K. Nishio, Y. Hikita, and H. Y. Hwang, ACS Appl. Electron. Mater. 1, 1269-1274 (2019).

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Presenters

  • Prastuti Singh

    • Department of Applied Physics, Stanford University
    • Applied Physics, Stanford University

Authors

  • Prastuti Singh

    • Department of Applied Physics, Stanford University
    • Applied Physics, Stanford University

  • Seung Sae Hong

    • Stanford University
    • Department of Applied Physics, Stanford University
    • Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory & Stanford University

  • Varun Harbola

    • Department of Physics, Stanford University

  • Harold Hwang

    • Institute for Materials and Energy Sciences, Stanford University
    • Stanford University
    • Department of Applied Physics, Stanford University
    • Applied Physics, Stanford University
    • SIMES, SLAC
    • Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA
    • SLAC National Accelerator Lab.
    • Physics, Stanford University
    • Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory