Radical-based MBE growth, chemical doping, and electronic transport in SrSnO<sub>3</sub> films
ORAL
Abstract
In this talk, we present our recent study of radical-based molecular beam epitaxy (MBE) growth, and controlled doping in coherent, epitaxial n-doped SrSnO3/GdScO3 (001) films using La and Nd as dopants. By combining detailed growth, structural characterizations, secondary ion mass spectroscopy (SIMS) and temperature-dependent magnetotransport measurements, we show films with one-to-one correlation between dopant and activated carrier concentration. Carrier density exceeding 1 × 1020 cm−3 was achieved in doped SrSnO3 films, which is in excellent agreement with the dopant-solubility limit predicted by density functional theory calculations. A record-high room-temperature mobility of 70 cm2 V−1s−1 at 1 × 1020 cm−3 was obtained in a 12 nm La-doped SrSnO3 film, making this the thinnest perovskite oxide semiconductor with electron mobility exceeding 25 cm2 V−1s−1 at room temperature. We discuss the structure - dopant - scattering mechanisms - transport property relationships, providing essential knowledge for the design of electronic devices using these materials.
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Presenters
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Tristan Truttmann
- Department of Chemical Engineering and Materials Science, University of Minnesota
- University of Minnesota
- Chemical Engineering and Materials Science, University of Minnesota - Twin Cities