Tuning the electrical properties of GdSb thin films by epitaxial strain

ORAL

Abstract

Early studies of rare-earth monopnictide (RE-V) thin films have focused mainly on their applications as buried ohmic contacts for III-V semiconductors, THz emitters and detectors, thermoelectrics, diffusion barriers, and plasmonic heterostructures. Recent predictions of topological semimetallic states and observations of extremely large magnetoresistance (XMR) in RE-Vs, and specifically GdSb, have opened up a new research front aimed at studying the interplay between magnetic ordering and XMR. Here we demonstrate the epitaxial growth and characterization of GdSb thin films with thickness varied from 3-60 nm and biaxial strains ranging from -2% to +2% lattice-mismatch. Utilizing x-ray diffraction, in-vacuo angle-resolved photoemission spectroscopy, SQUID magnetometry and magnetotransport measurements we map out shifts in energy bands and trends in exchange interaction parameters due to dimensional confinement and biaxial strain.

*Synthesis and ARPES experiments are supported by the US DOE (Contract No. DE-SC0014388). Development of the growth facilities and low temp. magnetotransport measurements are supported by the ONR VBFF Award No. N00014-15-1-2845. This research used resources of the ALS, which is a DOE Offce of Science User Facility under contract No. DEAC02- 05CH11231.

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Presenters

  • Hadass Inbar

    • Materials, University of California, Santa Barbara

Authors

  • Hadass Inbar

    • Materials, University of California, Santa Barbara

  • Shouvik Chatterjee

    • Electrical & Computer Engineering, University of California, Santa Barbara

  • Mihir Pendharkar

    • Dept. of Electrical Engineering, Univ. of California, Santa Barbara, CA, USA
    • IEE, UC Santa Barbara
    • University of California Santa Barbara
    • Univ of California, Santa Barbara
    • Electrical and Computer Engineering, University of California Santa Barbara
    • Electrical & Computer Engineering, University of California, Santa Barbara
    • University of California, Santa Barbara

  • Yu hao Chang

    • Materials Department, University of California, Santa Barbara
    • Materials, University of California, Santa Barbara

  • Maxwell Miles Bocheff

    • Materials, University of California, Santa Barbara

  • Taozhi Guo

    • Materials, University of California, Santa Barbara

  • Tobias L Brown-Heft

    • Materials, University of California, Santa Barbara

  • Alexei V Fedorov

    • Advanced Light Source, Lawrence Berkeley National Lab
    • Advanced Light Source, Lawrence Berkeley National Laboratory

  • Dan Read

    • School of Physics and Astronomy, Cardiff University

  • Chris J Palmstrom

    • Materials Department, University of California, Santa Barbara
    • UCSB
    • Departments of Electrical and Computer Engineering and Materials, University of California, Santa Barbara
    • Dept. of Electrical Engineering, Univ. of California, Santa Barbara, CA, USA
    • Univ. of California, Santa Barbara
    • Electrical and Computer Engineering Department, University of California, Santa Barbara
    • University of California, Santa Barbara
    • IEE, UC Santa Barbara
    • University of California Santa Barbara
    • Univ of California, Santa Barbara
    • Electrical and Computer Engineering, University of California Santa Barbara
    • Materials and Electrical & Comp. Eng, University of California, Santa Barbara