Transport properties of ultra-scaled Ge/Si core/shell nanowires with highly transparent Al contacts.

ORAL

Abstract

Superconducting-semiconducting hybrid systems provide a rich domain for the investigation of electronic and quantum transport. Further, promising developments in their application in high performance nanoelectronics and quantum devices has motivated significant research and development. Nanowire heterostructures are of particular interest due to their quantum confinement properties allowing one to investigate transport in quasi one-dimensional systems. However, critical to their success is the fabrication of high quality and reproducible semiconductor-superconductor interfaces. Using a novel annealing technique, we have realised nanowire heterostructures consisting of crystalline-Al/Si core/shell leads contacting tuneable Ge/Si core/shell segments with atomically precise interfaces. We will present results of temperature dependent DC transport measurements on ultra-scaled devices. Reporting on the gate tuneable transport properties of these highly transparent devices including quantized conductance, tuneable Josephson current and multiple Andreev reflections and their applications as quantum devices.

*J. Delaforce acknowledges the European Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 754303.

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Presenters

  • Jovian Delaforce

    • Neel Institute, University Grenoble Alpes, CNRS
    • Institut Neel
    • Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
    • Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble, France

Authors

  • Jovian Delaforce

    • Neel Institute, University Grenoble Alpes, CNRS
    • Institut Neel
    • Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
    • Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble, France

  • Masiar Sistani

    • Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria

  • Roman Kramer

    • Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble, France

  • Nicolas Roch

    • Neel Institute, University Grenoble Alpes, CNRS
    • NEEL
    • Institut Neel
    • Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
    • Univ. Grenoble Alpes and Institut Néel, CNRS, 38000 Grenoble, France
    • Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble, France

  • Minh-Anh Luong

    • Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054 Grenoble, France

  • Martien Den-Hertog

    • Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble, France

  • Eric Robin

    • Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054 Grenoble, France

  • Juergen Smoliner

    • Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria

  • Jun Yao

    • Department of Electrical and Computer Engineering, Institute for Applied Life Sciences, University of Massachusetts, Amherst, Massachusetts, 01003, USA

  • Charles M Lieber

    • Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, 02138, USA

  • Cécile Naud

    • Neel Institute, University Grenoble Alpes, CNRS
    • Univ. Grenoble Alpes and Institut Néel, CNRS, 38000 Grenoble, France
    • Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble, France

  • Alois Lugstein

    • Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, 02138, USA

  • Olivier Buisson

    • Neel Institute, University Grenoble Alpes, CNRS
    • Institut Neel
    • Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
    • Univ. Grenoble Alpes and Institut Néel, CNRS, 38000 Grenoble, France
    • Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble, France