Magneto-transport of electrons in near surface InAs quantum wells in contact with NbTiN
ORAL
Abstract
Indium Arsenide (InAs) near surface quantum wells have become the focus of recent interest for their use in heterostructures with superconductors. An interface between a superconductor and quantum Hall edges is predicted to exhibit excitations with non-abelian statistics. NbTiN-InAs is a promising candidate as NbTiN can sustain strong magnetic fields where InAs can host integer quantum Hall states. In this work, we study the proximity effect by monitoring the current flow along the superconductor-semiconductor interface. The data suggest the enhanced conductance is due to Andreev reflection when edge states are formed in the presence of a strong magnetic field.
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This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. DOE’s National Nuclear Security Administration under contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.
This work was supported partially by NSF EAGER under award number DMR-1836687.
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Presenters
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Mehdi Hatefipour
- New York University
- New York Univ NYU
- Department of Physics, New York University