Low-temperature magnetic proximity effects in Mg(Al,Fe)<sub>2</sub>O<sub>4</sub>/Bi<sub>2</sub>Se<sub>3</sub> bilayers

ORAL

Abstract

Topological insulators (TIs) are of significant interest in spin current-based electronics due to their strong spin-orbit coupling from spin-momentum locking of surface states. Bi2Se3 is a 3D topological insulator with a semiconductor gap in the bulk and gapless surface states. However, conduction near room temperature is typically bulk-dominated due to Se vacancies. Bilayers of Mg(Al,Fe)2O4 (MAFO), a magnetic insulator, and Bi2Se3 show highly efficient spin pumping in the bulk-dominated regime at room temperature. At low temperature, below 45 K, we have found evidence of proximity-induced magnetism in the TI. To understand the underlying mechanism of this proximity-induced magnetism, we performed polarized neutron reflectometry which indicates a sharp interface and a magnetic moment in the TI up to at least 45 K. In transport measurements, we observed both the anomalous Hall effect (AHE) and a large unidirectional magnetoresistance in the TI. The AHE, around 1 Ω at 2 K, was observed up to ~40 K and was amplified by electrically gating Bi2Se3. These results suggest that the induced magnetism in Bi2Se3 is primarily due to the coupling between MAFO and the surface states of Bi2Se3.

*Funded by the Vannevar Bush Faculty Fellowship of the DoD under Grant #N00014-15-1-0045 and NSF GRFP.

Presenters

  • Lauren Riddiford

    • Stanford University
    • Stanford Univ
    • Applied Physics, Stanford University

Authors

  • Lauren Riddiford

    • Stanford University
    • Stanford Univ
    • Applied Physics, Stanford University
  • Peng Li

    • Auburn University
    • Electrical and Computer Engineering, Auburn University
  • Alexander Grutter

    • National Institute of Standards and Technology
    • NIST Center for Neutron Research
  • Yuri Suzuki

    • Stanford University
    • Stanford Univ
    • Dept. of Applied Physics, Stanford University
    • Geballe Laboratory for Advanced Materials, Stanford University
    • Applied Physics, Stanford University