Quantum critical point and ferromagnetic semiconducting behavior in p-type FeAs<sub>2</sub>

ORAL

Abstract

Ferromagnetic semiconductors are of interest due to the unusual combination of physical properties and because if tunable they may offer opportunities for studying magnetic quantum critical points. Here, we illustrate an approach for studying suitable materials based on itinerant magnetism, different from conventional magnetic semiconductors. We show that p-type FeAs2 is an example. The complex non-parabolic band structure of this material leads to a ferromagnetic instability when doped, while at the same time allowing for a modest transport effective mass. This leads to an analogy between magnetic semiconductors and thermoelectric materials.

*This work was supported by the Department of Energy, award number DE-SC0019114.

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Presenters

  • Bing-Hua Lei

    • Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA

Authors

  • Bing-Hua Lei

    • Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA

  • Yuhao Fu

    • University of Missouri
    • Univ of Missouri - Columbia
    • Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA

  • Zhenzhen Feng

    • Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA

  • David Singh

    • Univ of Missouri - Columbia
    • University of Missouri
    • Physics, The University of Missouri
    • Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA