Electrical characterization of a tungsten diselenide/silicon heterostructure

ORAL

Abstract

A pn diode was fabricated by using a simple method of transferring a p-type two-dimensional WSe2 film onto a cleaved n-Si/SiO2 wafer. The current-voltage characteristics of the device were measured, and the conduction mechanisms analyzed over a temperature range of 80 K–300 K. At high temperatures, the current-voltage characteristics of the diode show that thermionic emission transport dominates. However, tunneling also contributes at low temperatures. To explain the transport behavior of the heterojunction, a model that takes into consideration both thermionic emission and tunneling will be presented. Furthermore, the device was tested as a half-wave rectifier at room temperature at low frequencies. The rectification ratio and low turn-on voltages of the diode make it suitable for optoelectronic applications.

*The WSe2 films were provided by the PSU 2DCC-MIP, which is supported by NSF cooperative agreement DMR-1539916. Research at UPRH was supported by NSF under grant NSF-DMR-1523463 (PENN-UPRH Partnership for Research and Education in Materials).

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Presenters

  • Ahmad Matar Abed

    • Department of Physics and Electronics, University of Puerto Rico - Humacao

Authors

  • Ahmad Matar Abed

    • Department of Physics and Electronics, University of Puerto Rico - Humacao

  • Anamaris Melendez

    • Univ of Puerto Rico - Humacao
    • Department of Physics and Electronics, University of Puerto Rico - Humacao
    • Physics and Electronics, University of Puerto Rico at Humacao

  • Nicholas Pinto

    • Univ of Puerto Rico - Humacao
    • Department of Physics and Electronics, University of Puerto Rico - Humacao

  • José O. Sotero-Esteva

    • Department of Mathematics, University of Puerto Rico - Humacao

  • Idalia Ramos

    • Department of Physics and Electronics, University of Puerto Rico - Humacao
    • Physics and Electronics, University of Puerto Rico at Humacao