An infrared investigation of the insulator-to-metal transition in a thin, epitaxially strained VO<sub>2</sub> film

ORAL

Abstract

The insulator-to-metal transition temperature of vanadium dioxide (VO2) can be tuned through epitaxial strain induced by lattice mismatch between a thin VO2 film and the substrate. Here we report infrared and optical measurements on a very thin (~ 10 nm) VO2 film on (001) TiO2 substrate with an insulator-to-metal transition temperature of ~ 305 K, just above room temperature. We map the transition as it evolves in temperature using near-field imaging at a wavelength of ~10μm from a mid-infrared laser. Using our tabletop home-built argon plasma light source, we obtain the broadband near-field infrared spectra on the pristine substrate and the film-substrate system.

*M.M.Q. acknowledges support from NSF DMR-1255156

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Presenters

  • David Lahneman

    • Department of Physics, College of William & Mary

Authors

  • David Lahneman

    • Department of Physics, College of William & Mary

  • Patrick McArdle

    • Department of Physics, College of William & Mary

  • Muhammad M Qazilbash

    • Department of Physics, College of William & Mary

  • Tetiana Slusar

    • Metal-Insulator Transition Laboratory, Electronics and Telecommunications Research Institute
    • Electronics and Telecommunications Research Institute

  • Hyun-Tak Kim

    • Metal-Insulator Transition Laboratory, Electronics and Telecommunications Research Institute
    • MIT & Quantum Lab., Electronics and Telecommunications Research Institute
    • Electronics and Telecommunications Research Institute