Resistance fluctuation of V<sub>2</sub>O<sub>3</sub> films near the metal-insulator transition
ORAL
Abstract
The metal-insulator transition in the correlated material V2O3 is a highly studied phenomenon. Recent research has shown the nanotextured phase coexistence around the transition temperature (Tc) in V2O3 films, but the dynamic electronic properties are still not well resolved. Here, we study resistance fluctuations as a function of time in both low frequency (< 300 kHz) and higher frequency (225MHz-580MHz) ranges, comparing them to show the dynamic properties at both low and high frequency. We performed measurements at temperatures above Tc, close to Tc, and below Tc. We found 1/f type noise close to and below (yet near) Tc as expected at low frequencies, and similar resistance fluctuation noise (mean square voltage fluctuations proportional to the square of the bias current) at higher frequency. However, the integrated noise intensity at high frequency exceeds our expectation based on an extrapolation of the observed low frequency data. More detailed measurements and experiments are ongoing to reveal the mechanism that causes the resistance fluctuations in V2O3 films near the metal-insulator transition.
*The authors acknowledge support from the U.S. DOE office of Science/Basic Energy Science Award DE-FG02-06ER46337.
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Presenters
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Liyang Chen
- Rice University