Resistive switching in tunnel junctions with a single-crystal La<sub>2</sub>NiO<sub>4</sub> electrode

ORAL

Abstract

We study the resistive switching in tunnel junctions with single-crystal La2NiO4 electrodes. Such electro-resistive devices are promising candidates for future nonvolatile memory and reconfigurable logic applications thanks to their simple structure, scalability and endurance. Our tunnel junctions were prepared by painting a spot of conductive silver epoxy on the surface of La2NiO4 single crystal. The interface between the silver and the semiconducting single crystal served as a natural barrier forming planar normal metal/insulator/semiconductor (N-I-S) tunnel junctions with resistances ranging from a few tens to tens of thousands of Ohms. The current-voltage measurements performed on such junctions at room temperature demonstrated a bias-driven resistive switching with ratios above 1000% and high endurance. In situ measurements with two junctions (N-I-S-I-N) demonstrate the polarity-dependent resistive switching of the two (N-I-S and S-I-N) junctions and show no contribution from the bulk of the La2NiO4 crystal. Such an interfacial nature of the switching phenomenon is promising for fabrication of thin-film planar devices to be used in nonvolatile memory and logic.

*This work was supported in part by NSF grants DMR-1712101 and DMR-1122603 and by KAUST Award No. OSR-2015-CRG4-2626

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Presenters

  • Shida Shen

    • Department of Physics and Texas Materials Institute, University of Texas at Austin
    • Physics Department and Texas Materials Institute, University of Texas at Austin

Authors

  • Shida Shen

    • Department of Physics and Texas Materials Institute, University of Texas at Austin
    • Physics Department and Texas Materials Institute, University of Texas at Austin

  • Morgan Williamson

    • Department of Physics and Texas Materials Institute, University of Texas at Austin
    • Physics Department and Texas Materials Institute, University of Texas at Austin

  • Gang Cao

    • Department of Physics, University of Colorado-Boulder
    • Department of Physics, University of Colorado, Boulder CO 80309
    • Department of Physics, University of Colorado, Boulder, CO 80309
    • Department of Physics, University of Colorado at Boulder
    • Physics and Astronomy, University of Kentucky
    • University of Colorado, Boulder
    • University of Colorado Boulder

  • Jianshi Zhou

    • Texas Materials Institute, University of Texas at Austin
    • University of Texas at Austin
    • Mechanical Engineering, University of Texas at Austin
    • Mechanical Engineering, University of Texas
    • University of Texas (Austin, USA)
    • Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA

  • Maxim Tsoi

    • Department of Physics and Texas Materials Institute, University of Texas at Austin
    • Physics Department and Texas Materials Institute, University of Texas at Austin