Strain-tunable single-photon emission from an atomically thin semiconductor
ORAL
Abstract
One of the most unique mechanical properties of two-dimensional (2D) materials over conventional semiconductors is their high stretchability of more than 20% before fracture1. Recently strain induced single photon emitters have been observed in 2D transition metal dichalcogenides2-6. Tuning their emission energy is highly desired for efficient coupling to photonic devices. We demonstrate such tunability by engineering van der Waals heterostructure consisting of graphene/h-BN/WSe2 on a piezoelectric actuator. Application of an electric field across the piezoelectric substrate induces a biaxial strain on the emitters hosted by the monolayer WSe2 in the heterostructure. We have demonstrated a strain tunable energy shift of tens of meV using this approach.
1. Akinwande et al, Nature Communications, 5, 5678 (2014)
2. He et al, Nature Nanotechnology, 10, 497, (2015)
3. Chakraborty et al, Nature Nanotechnology, 10, 507, (2015)
4. Berraquero et al, Nature Communications 8, 15093 (2017)
5. Srivastava et al, Nature Nanotechnology 10, 491 (2015)
6. Koperski et al, Nature Nanotechnology 10, 503 (2015)
1. Akinwande et al, Nature Communications, 5, 5678 (2014)
2. He et al, Nature Nanotechnology, 10, 497, (2015)
3. Chakraborty et al, Nature Nanotechnology, 10, 507, (2015)
4. Berraquero et al, Nature Communications 8, 15093 (2017)
5. Srivastava et al, Nature Nanotechnology 10, 491 (2015)
6. Koperski et al, Nature Nanotechnology 10, 503 (2015)
*This work was supported by NSF EFRI 2-DARE 1542863, NSF EFRI EFMA-1542707, NSF CAREER DMR 1553788,
AFOSR FA9550-16-1-0020, Army Research Office (ARO W911NF-18-1-0431).
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Presenters
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Chitraleema Chakraborty
- Electrical Engineering and Computer Science, MIT
- Massachusetts Institute of Technology
- University of Rochester