The Effect of Strain and Strain Relaxation on the Atomic-Scale in Monolayer MoS<sub>2 </sub>Films
ORAL
Abstract
The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of 2D materials into flexible electronics and next generation strain engineering devices. In this work we use scanning tunneling microscopy and spectroscopy (STM/STS) to correlate the atomic-scale lattice deformation and local electronic properties with a systematic macroscopic bending of monolayer molybdenum disulfide (MoS2) films, using a custom-built sample holder. Using this technique, we find a reduction of the quasiparticle band gap with increasing strain. In addition, nanoscale strain relaxation of van der Waals monolayer sheets has been investigated and resulted in 1D ripples and 2D wrinkles which alter the local strain fields as well as the local electronic density of states.
*Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.
This work was supported as part of the Center for Complex Materials from First Principles, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Grant No. DE-SC0012575.
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Presenters
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Dan Trainer
- Physics Department, Temple University
- Department of Physics, Temple University