Modeling transport in phosphorus δ-doped silicon tunnel junctions
ORAL
Abstract
Electrical devices based on Si:P δ layers can be fabricated with atomic precision, which could allow for the fabrication of high-efficiency tunneling field effect transistors (TFETs). While great strides have been made in fabricating nanoelectronics from Si:P δ layers, there is little agreement about the electronic structure of the Si:P δ layers. Furthermore, the transport properties of only a few devices have been modeled. We use a scalable model to study transport in nanoscale tunnel junctions made from Si:P δ layers, and we show that the transport properties of tunnel junctions can provide insight into the electronic structure of Si:P δ layers. We also compare our model to experimental results and find good agreement.
*This work was supported by the Laboratory Directed Research and Development Program and was performed in part at the Center for Integrated Nanotechnologies, a US DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is managed and operated by National Technology and Engineering Solutions of Sandia LLC, a subsidiary of Honeywell International Inc., for the U.S. Dept. of Energy’s National Nuclear Security Administration under contract DE-NA0003525. The views expressed do not necessarily represent the views of the DOE or the U.S. Government.
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Presenters
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Leon Maurer
- Sandia National Laboratories