Electrical Transport Study in Wafer Scale Epitaxial WTe<sub>2</sub> Film Grown by Molecular Beam Epitaxy
ORAL
Abstract
WTe2, a member of the layered transition metal dichalcogenides (TMDs), has recently garnered attention due to its topological properties. Current studies of WTe2 have mainly focused on samples produced by mechanical exfoliation. Recent success has shown that WTe2 is able to grow on graphene using molecular beam epitaxy (MBE). As a conducting layer, graphene may weaken or smear any signatures of topological transport in WTe2. In this talk, we present our electrical transport studies in wafer scale WTe2 grown on insulating sapphire substrate. The 1Tâ structural phase of the MBE grown samples is confirmed by in situ reflection high energy electron diffraction (RHEED). Electrical transport studies show a sharply enhanced magnetoresistance (MR) at low temperature. The MR has a clear linear magnetic field dependence over a range of magnetic fields up to 12 Tesla. In the low field regime, we observe signatures of weak antilocalization which suggest the presence of strong spin-orbit coupling. We will also present the effect of varying thickness of WTe2 on magnetotransport, and discuss potential signatures related to topological order.
*This work is supported by the Startup fund from University of California, Riverside.
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Presenters
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Jason Tran
- University of California, Riverside