Van der Waals charge-transfer interfaces

The creation of functional interfaces between different materials has often led to a discovery of a unique electronic property and functionality that is missing in the constituent materials, providing an invaluable material platform in modern science and technology. 2D materials are suitable compounds for construction of such an interface due to existence of the van der Waals gap that enables creation of an atomically-abrupt interface, and in fact various types of heterostructures named ‘van der Waals heterostructures’ have been more and more developed for the last few years. However, those researches have mainly focused on electrical transport across the interface, while lateral transport properties along the interface have been less studied so far. In this presentation, we will demonstrate emergence of electrical conduction at the interface between insulating 2D materials fabricated by molecular-beam epitaxy with our growth recipe [1]. [1] M. Nakano, et. al., Nano Lett. 17, 5595 (2017).