Ambient effects on hysteresis and photogating in MoS₂ photodetectors

Transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin optoelectronics that can be flexible and semitransparent. Photodetectors based on TMDs have demonstrated remarkable performance, with high responsivity and high detectivity ^[1], however these devices are hindered by a slow response time caused by charge trapping. Gas adsorbents which create charge traps, are a main contribution to hysteresis and photogating ^[2,3]. Here we study the effect of ambient conditions on the performance of MoS₂ photodetectors through vacuum pumping and illumination.

Reference:
1. Han, P., Marie, L.S., Wang, Q.X., Quirk, N., El Fatimy, A., Ishigami, M. and Barbara, P., 2018. Highly sensitive MoS2 photodetectors with graphene contacts. Nanotechnology, 29(20), p.20LT01.

2. Ahn, J.H., Parkin, W.M., Naylor, C.H., Johnson, A.C. and Drndić, M., 2017. Ambient effects on electrical characteristics of CVD-grown monolayer MoS 2 field-effect transistors. Scientific Reports, 7(1), p.4075.

3. Di Bartolomeo, A., Genovese, L., Giubileo, F., Iemmo, L., Luongo, G., Foller, T. and Schleberger, M., 2017. Hysteresis in the transfer characteristics of MoS2 transistors. 2D Materials, 5(1), p.015014.