Fabrication and Measurement of Atomically Precise Single Electron Islands
ORAL
Abstract
Phosphorous donor devices fabricated in silicon with a scanning tunneling microscope (STM) are used as a discovery platform for everything ranging from quantum physics to ultra-efficient tunnel field effect transistors because the underlying hydrogen lithography step can be performed with atomic precision. Many of these devices designs rely on electrostatic gating to tune electrical tunneling through the device. It is expected that out-of-plane gates will be more efficient at gating than in-plane gates. We present on fabrication techniques for adding top gates to devices and the resulting low-temperature measurements on tunnel junctions and single electron islands.
*This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories, and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility.
Sandia National Labs is managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a subsidiary of Honeywell International, Inc., for the U.S. Dept. of Energy’s National Nuclear Security Administration under contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.
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Presenters
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Daniel Ward
- Sandia National Laboratories
- Sandia Natl Labs
- University of Wisconsin-Madison