Crop up of the B<sub>1l</sub> mode in high quality GaN nanowires due to isotopic disorder

ORAL

Abstract

The B1l and B1h vibrational modes of GaN are silent, i. e. they cannot appear neither in Raman nor in infra-red spectroscopies. However, the B1l mode appears with a small linewidth in the Raman scattering spectra on high quality ultra-narrow GaN nanowires, while the B1h mode does not. The simulltaneous appearance of the A1(LO) and B1l in the ultraviolet region indicates: a) that the B1l mode is related to a resonance effect, i. e. Fröhlich interaction plays a role and b) the mechanism allowing the appearance of the B1l does not allow the observation of the B1h. After performing density functional theory calculations and discarding several options we have concluded that the only difference between both modes is the isotopic composition [1]. While Ga, which contributes to the B1l mode, has mainly two isotopes, 69Ga and 71Ga, N, the main contributor to the high frequency mode, has basically one isotope, i.e. it is isotopically ordered.
[1] C. R-F et al., Nano Lett. 18, 5091 (2018).

*The research was carried out under the projects MAT2015-63955-R and MAT2016-82015-REDT of Spain, DMREF-NFS 1439847, OCI-1053575 and OAC-1740111 from NSF, and DE-SC0016176 from Department of Energy. We thanks Texas Advance Computer Center and Pittsburg Supercomputer Center for providing us computing time.

Presenters

  • Andres Cantarero

    • Molecular Science Institute, University of Valencia, Spain

Authors

  • Andres Cantarero

    • Molecular Science Institute, University of Valencia, Spain
  • Carlos Rodriguez-Fernandez

    • Molecular Science Institute, University of Valencia, Spain
  • Mohammed Almokhtar

    • Department of Physics, Assiut University, Egipt
  • Wilfredo Ibarra-Hernandez

    • Facultad de Ingenieria, BUAP, Mexico
  • Mauricio Morais.de Lima Jr.

    • Molecular Science Institute, University of Valencia, Spain
  • Aldo Romero

    • Applied Physics Department, West Virginia University, USA
  • Hajime Asahi

    • Institute of Scientific and Industrial Research, Osaka University, Japan