Measurement of g-factor in InAs and InAs<sub>.5</sub>Sb<sub>.5 </sub>Surface Quantum Wells
ORAL
Abstract
The rising interest into topological superconductors has led to the exploration of hybrid superconductor-semiconductor structures. In these structures two dimensional electron gases are confined near surface and can make epitaxial contact to superconducting thin films. Large Zeeman splitting and spin orbit coupling are necessary ingredients to look for when choosing the semiconductor. Here we present findings of our experiments on two prime candidates with strong spin orbit interaction and high g-factor: InAs and InAs.5Sb.5. We measure weak anti-localization signal and integer quantum hall energy gaps as a function of carrier density in near surface quantum wells of both materials. We use fitting of weak anti-localization to determine strength of spin orbit interaction and the energy gaps of odd Integer quantum Hall states (v=3 and v=5) to extract g-factors.
*We acknowledge support for this research from NSF and Darpa TEE.
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Presenters
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Mehdi Hatefipour
- Physics, New York University
- Department of Physics, New York University