Surface Repair and Passivation of InAs Quantum Wells with ALD
ORAL
Abstract
The two-dimensional electron gas formed in InAs quantum wells and proximitized with epitaxially grown Aluminium has attracted interest as a possible host for Majorana zero modes. This is due to the strong spin-orbit coupling and large Landé g-factor in this material. However, the need to induce superconductivity in the quantum well requires it to be grown close to the surface (~12nm), making the 2DEG highly sensitive to any processing. In particular, the aluminium etch, typically a Transene-based wet etch, has limited measured mobility in InAs quantum wells.
In this work, we report on the use of Al2O3 grown by ALD, with in-situ surface pre-treatment via TMA pulses or an Ar/H plasma, to repair and passivate the surface after processing, and demonstrate the reduction of charged surface states. We show that by this method, we are able to enhance the measured carrier mobility of these devices up to ~45000 cm2/(V s). Finally, the spin orbit length is extracted as a function of density, controlled using a global top-gate, to determine spin-scattering mechanisms. Our results provide a path towards high quality, shallow 2DEG-based Majorana devices.
In this work, we report on the use of Al2O3 grown by ALD, with in-situ surface pre-treatment via TMA pulses or an Ar/H plasma, to repair and passivate the surface after processing, and demonstrate the reduction of charged surface states. We show that by this method, we are able to enhance the measured carrier mobility of these devices up to ~45000 cm2/(V s). Finally, the spin orbit length is extracted as a function of density, controlled using a global top-gate, to determine spin-scattering mechanisms. Our results provide a path towards high quality, shallow 2DEG-based Majorana devices.
*This work was supported by funding from Microsoft Station Q.
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Presenters
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Sebastian Pauka
- School of Physics, The University of Sydney
- School of Physics, Univ of Sydney
- ARC Centre of Excellence for Engineered Quantum Systems, The University of Sydney