Modulation doping in SrSnO<sub>3</sub>/BaSnO<sub>3</sub> heterostructures
POSTER
Abstract
Through a combination of MBE growth, hard X-ray photoelectron spectroscopy (HAXPES), magnetoresistance measurements and transport modeling, we report on the realization of two-dimensional electron gas (2DEG) at SrSnO3/BaSnO3 (SSO/BSO) heterointerfaces. The HAXPES revealed the valence band offset between SSO and BSO to be 0.7 eV resulting in a favorable conduction band offset for modulation doping of BSO using SSO as a spacer layer. Two-channel conduction suggested by the non-linear transverse hall resistance as a function of magnetic field revealed the transfer of electrons from La-doped SSO to BSO. The sheet carrier density on the BSO side was measured to be 5×1012 cm-2 consistent with the value obtained using a self-consistent solution to one-dimensional Poisson and Schrödinger equations. The role of band offset, interface roughness and threading dislocations in BSO will be discussed with the goal to obtain high mobility oxide heterostructures.
*Work supported by NSF DMR and AFOSR YIP
Presenters
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Abhinav Prakash
- Chemical Engineering and Materials Science, University of Minnesota - Twin Cities
- University of Minnesota