Exploration of exciton behavior in atomically thin WS2 layers by ionic gating

POSTER

Abstract

The photoluminescence spectra of mono- and bilayer WS2, gated by the ionic liquid, were systematically studied at 77 K. Interesting phenomena, such as a redshift of the exciton peaks and a change in the spectral weight of the exciton, trion, and biexciton peaks, were observed at intermediate doping levels. By increasing the doping level, all the exciton, trion, and biexciton peaks vanished, which is attributed to the phase-space filling effect and the Coulomb screening effect. The variation in the band structure, which was induced by the quantum-confined Stark effect in both the mono- and bilayer WS2, was also studied using first-principle calculations.

Presenters

  • Xin He

    • Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)

Authors

  • Xin He

    • Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)
  • Zehui Zhang

    • Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)
  • Chenhui Zhang

    • Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)
    • Physical Science and Engneering, King Abdullah University of Science and Technology
    • King Abdullah University of Science and Technology
  • Yang Yang

    • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,, Chinese Academy of Sciences
  • Ming Hu

    • Institute of Mineral Engineering, Division of Materials Science and Engineering, Faculty of Georesources and Materials Engineering, RWTH Aachen University
  • Weikun Ge

    • School of Physics, Peking University
  • Xixiang Zhang

    • King Abdullah University of Science and Technology
    • Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)
    • Physical Science and Engneering, King Abdullah University of Science and Technology