Visualization of domain and interfacial structures of Monolayer semiconductors by Nonlinear Optical Microscopy
POSTER
Abstract
Domain and interfacial structures of the monolayer transition metal dichalcogenides (TMD) are significant to diverse physics and performances. Unique carrier transportation and bandgap tunability could be engineered with inter-grain twisting, which provide an extra degree of freedom for device designing. Here, the correlation between GBs and inter-grain twisting in monolayer WS2 is studied using nonlinear microscopy. With the change of inter-grain twisting, domain and interfacial structures of the monolayer is monitored and studied.
*The authors acknowledge support from AOARD grant (co-funded with ONRG) FA2386-16-1-4009, Ministry of Science and Technology (MoST-106-2119-M-007-023-MY3; MoST-105-2811-M-007 -093; MoST-105-2112-M-007-032-MY3, MoST-105-2119-M-007-027, and MoST-105-2633-M-007-003), and Academia Sinica Research Program on Nanoscience and Nanotechnology, Taiwan.
Presenters
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Chun An Chen
- National Tsing-Hua University, National Tsing Hua University
- National Tsing Hua University