Electrical Characterization of Semiconductor Nanostructure Based Capacitors

POSTER

Abstract

Semiconductor nanostructures are employed as dielectric materials to investigate the performance of a capacitor. We study the effect of geometry and the type and thickness of semiconductors on the total capacitance using electrical measurements. SrTiO3 nano-powder and GaAs and Si nanowires (NW) are chosen for their relatively high dielectric constant. For capacitor plates we deposit ~30 nm Au on both solid glass and flexible PMMA substrate using an electron beam deposition system. The vertically aligned 50 nm diameter GaAs NWs were grown using the Au catalyzed vapor-liquid-solid method. The Si NWs are randomly oriented with an average diameter of 70 nm. The SrTiO3 nano-particles are cubical with a width of around 30 nm. Parallel arrays of GaAs NWs, as well as a random distribution of Si NWs or SrTiO3 nano-powder, lying between two Au coated substrate is composing the capacitors. Capacitance measurements on the reference sample, Au plates with air dielectric spacer, reveal capacitance in the pico-Farad order at room temperature. Capacitor structures with semiconductor dielectrics however show an enhancement of the total capacitance, mainly explained by the semiconductor spacer weakening the effective internal electric.

*The support of the 4VA at JMU is kindly acknowledged.

Presenters

  • Masoud Kaveh-Baghbadorani

    • Department of Physics and Astronomy, James Madison University, Harrisonburg, Virginia 22807, U.S.A.
    • Department of Physics and Astronomy, James Madison University

Authors

  • Masoud Kaveh-Baghbadorani

    • Department of Physics and Astronomy, James Madison University, Harrisonburg, Virginia 22807, U.S.A.
    • Department of Physics and Astronomy, James Madison University

  • W Christopher Hughes

    • Department of Physics and Astronomy, James Madison University

  • Maeven Luedke

    • Department of Physics and Astronomy, James Madison University

  • Nikolas Roeske

    • Department of Physics and Astronomy, James Madison University

  • Josh Mitri

    • Department of Physics and Astronomy, James Madison University

  • Fazel Baniasadi

    • Department of Physics, Virginia Tech

  • Chenggang Tao

    • Physics, Virginia Tech
    • Department of Physics, Virginia Tech
    • Virginia Tech

  • Hoe Tan

    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia
    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200, Australia
    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University
    • Department of Electronic and Materials Engineering, Australian National University

  • Mykhaylo Lysevych

    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia
    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University

  • Chennupati Jagadish

    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia
    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200, Australia
    • Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University
    • Department of Electronic and Materials Engineering, Australian National University