Epitaxial growth of MoSe<sub>2</sub> and MoTe<sub>2</sub> monolayer on GaAs by molecular beam epitaxy

POSTER

Abstract

Molybdenum diselenide (MoSe2) and molybdenum ditelluride (MoTe2) are promising transition metal dichalcogenides (TMDs) that have attracted great interests in recent years because of their unique electrical and optical properties. In this work, we fabricate crystallographically aligned MoSe2 and MoTe2 monolayers on gallium arsenide (GaAs) (111) surface by MBE as revealed by low energy electron diffraction (LEED) measurements. Unlike TMDs growth on van der Waals (vdW) substrates such as the highly oriented pyrolytic graphite (HOPG) and graphene, the interface interactions between GaAs and the epitaxial TMD films are electronically stabilized surface as suggested by X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) calculations. Ultraviolet photoelectron spectroscopy (UPS) measurements are also performed to provide additional evidence and results.

*This work is financially supported by a Collaborative Research Fund (C7036-17W) sponsored by the Research Grant Council (RGC), Hong Kong Special Administrative Region, China.

Presenters

  • Ze Men

    • Department of physics, The University of Hong Kong

Authors

  • Yipu Xia

    • Department of physics, The University of Hong Kong

  • Hailong Wang

    • State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
    • Institute of Semiconductors, Chinese Academy of Sciences

  • Ze Men

    • Department of physics, The University of Hong Kong

  • JunQiu Zhang

    • Department of physics, The University of Hong Kong

  • Hao Tian

    • Department of Physics, Southern University of Science and Technology

  • WingKing Ho

    • Department of physics, The University of Hong Kong

  • Hu Xu

    • Department of Physics, Southern University of Science and Technology

  • Jianhua Zhao

    • State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
    • Institute of Semiconductors, Chinese Academy of Sciences

  • MAOHAI XIE

    • Department of physics, The University of Hong Kong