Characterization of Ta<sub>x</sub>Ti<sub>(1-x)</sub>O<sub>y</sub> thin film and its applications in RRAM devices.

POSTER

Abstract

The movement of oxygen ions plays an important role in the resistive switching behavior of TiOx based devices, therefore the designed distribution of oxygen ions may help enhance the oxygen ion's movement and improve the resistive switching performance. In this work, we dope the TiOx thin film with a graded concentration of Ta in depth, to generate a spatial gradient of oxygen activation energy. Detailed characterization of the strcutual changes and resistive switching performance has been carried out, our result may suggest a new way to use dopants to help improve the resistive switching performance.

Presenters

  • Yu Shi

    • Electrical and Computer Engineering, University of Waterloo

Authors

  • Yu Shi

    • Electrical and Computer Engineering, University of Waterloo

  • Rabiul Islam

    • Electrical and Computer Engineering, University of Waterloo

  • Guoxing Miao

    • Institute for Quantum Computing, University of Waterloo
    • Electrical and Computer Engineering, University of Waterloo
    • IQC, University of Waterloo
    • Institute for Quantum Computing, Department of Electrical and Computer Engineering, University of Waterloo
    • University of Waterloo