SrTiO<sub>3</sub> surfaces prepared by HCl etching

ORAL

Abstract

In molecular beam epitaxy synthesis of crystalline heterostructures, the quality of the substrate surface is crucial. The substrate not only provides a structural template for the deposited film, but for many new materials which are just a few atomic layers thick, the interaction with the substrate determines the emergent electronic properties. SrTiO3 substrates are widely used for growth of complex oxides and superconducting FeSe, but reproducible surface preparation remains challenging. The standard recipe employs a buffered hydrofluoric acid etch, but it has been shown that this step results in significant fluorine replacement of oxygen near the surface of SrTiO3 [1]. Here we characterize halogen doping from use of an alternative etchant, hydrochloric acid.

[1] S.A. Chambers, T.C. Droubay, C. Capan, and G.Y. Sun, Surface Science 606, 554-558 (2012).

*This work was funded by the Gordon and Betty Moore Foundation’s EPiQS Initiative through Grant GBMF4536, and by the Office of Naval Research through Grant N00014-18-1-2691.

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Presenters

  • Camille Bean

    • Physics, Harvard University

Authors

  • Camille Bean

    • Physics, Harvard University

  • Miro Furtado

    • Physics, Harvard University

  • Jason D. Hoffman

    • Physics, Harvard University

  • Tatiana Webb

    • Physics, Harvard University
    • Department of Physics, Harvard University
    • Harvard University

  • Christian Matt

    • Department of Physics, Harvard University
    • Physics Department, Harvard University
    • Physics, Harvard University
    • Department of Physics, Harvard University, Cambridge, MA, United States

  • Jennifer Hoffman

    • Physics, Harvard University
    • Department of Physics, Harvard University
    • Harvard University
    • Department of Physics, Harvard University, Cambridge, MA, United States