Wafer-scale photolithography of ultra-sensitive nanocantilever force sensors
ORAL
Abstract
The detection of small forces using singly-clamped cantilevers is a fundamental feature in ultrasensitive versions of scanning probe force microscopy. In these technologies, silicon-based nanomechanical devices continue to be the most widespread high-performance nanomechanical sensors for their availability, ease of fabrication, inherently low mechanical dissipation, and good control of surface-induced mechanical dissipation.
Here, we develop a robust method to batch fabricate extreme-aspect-ratio (10^3), singly-clamped scanningnanowire mechanical resonators from plain bulk silicon wafers using standard photolithography. We discuss the superior performance and additional versatility of the approach beyond what can be achieved using the established silicon-on-oxide (SOI) technology.
Here, we develop a robust method to batch fabricate extreme-aspect-ratio (10^3), singly-clamped scanningnanowire mechanical resonators from plain bulk silicon wafers using standard photolithography. We discuss the superior performance and additional versatility of the approach beyond what can be achieved using the established silicon-on-oxide (SOI) technology.
*Y. P. acknowledges funding from a Rowland Postdoctoral Fellowship. C. M. and K. T. acknowledge support from the Harvard Physics Department, the Harvard Office of Undergraduate Research and Fellowships, and the Rowland Institute. This work was supported by a Rowland Fellowship to Y. T.. The sample fabrication was carried out at the Center for Nanoscale Systems (CNS) at Harvard University.
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Presenters
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Ying Pan
- Harvard University