Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi<sub>2</sub>O<sub>2</sub>Se

ORAL

Abstract

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V.s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena.

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Presenters

  • Cheng Chen

    • shanghaiTech University

Authors

  • Cheng Chen

    • shanghaiTech University

  • Meixiao Wang

    • shanghaiTech University

  • Jinxiong Wu

    • peking university

  • Huixia Fu

    • Weizmann Institute of Science

  • Haifeng Yang

    • shanghaiTech University
    • School of Physical Science and Technology, ShanghaiTech University, People's Republic of China

  • Zhen Tian

    • shanghaiTech University

  • Teng Tu

    • peking university

  • Han Peng

    • University of Oxford
    • Department of Engineering, University of Oxford

  • Yan Sun

    • Max Planck Institute for Chemical Physics of Solids
    • Max Planck Institute

  • Xiang Xu

    • tsinghua university

  • Juan Jiang

    • shanghaiTech University
    • Yale Univ
    • Applied Physics, Yale University
    • School of Engineering & Applied Science, Yale University, USA

  • Niels Schröter

    • University of Oxford
    • Swiss Light Source, Paul Scherrer Institut
    • Paul Scherrer Institute
    • Paul Scherrer Institut, Swiss Light Source

  • Yiwei Li

    • University of Oxford
    • Department of Physics, University of Oxford, United Kingdom
    • Department of Physics, University of Oxford

  • Ding Pei

    • University of Oxford

  • Shuai Liu

    • shanghaiTech University

  • Sandy Adhitia Ekahana

    • University of Oxford
    • Department of Physics, University of Oxford

  • Hongtao Yuan

    • Nanjing University

  • Jiamin Xue

    • shanghaiTech University
    • ShanghaiTech University

  • Gang Li

    • shanghaiTech University
    • School of Physical Science and Technology, ShanghaiTech University

  • Jinfeng Jia

    • shanghai jiao tong university
    • Shanghai Jiao Tong University
    • Department of Physics and Astronomy, Shanghai Jiao Tong University

  • zhongkai liu

    • shanghaiTech University
    • School of Physical Science and Technology, ShanghaiTech University, People's Republic of China
    • School of Physical Science and Technology, ShanghaiTech University

  • Binghai Yan

    • Weizmann Institute of Science

  • hailin peng

    • peking university

  • Yulin Chen

    • University of Oxford
    • Department of Physics, University of Oxford, United Kingdom
    • Department of Physics, University of Oxford