Si-doped Defect in Monolayer Graphene: Magnetic Quantization
ORAL
Abstract
We explore the rich and unique magnetic quantization of Si-doped graphene defect systems for various concentrations and configurations using the generalized tight-binding model. This model takes into account simultaneously the non-uniform bond lengths, site energies and hopping integrals, as well as a uniform perpendicular magnetic field . The magnetic quantized Landau levels (LLs) could be classified into four different groups based on the probability distributions and oscillation modes. The magneto-optical selection rules, reflecting the main characteristics of LLs, cover Δn = |nc-nv| = 0 and 1. These rules for inter-LL excitations arise from the non-equivalence or equivalence of the and sublattices in a supercell. The spectral intensity can be controlled by oscillator strength using a canonical momentum as well as by density of states using concentration and distribution of doped Si atoms.
*This material is based upon work supported by the Air Force Office of Scientific Research (AFOSR) under award number FA2386-18-1-0120. We acknowledges the support from the AFOSR and from the DoD Lab-University Collaborative Initiative (LUCI) Program and the support from the Air Force Research Laboratory (AFRL) through Grant \#12530960.
–
Presenters
-
Pohsin Shih
- Dept. of Physics, National Cheng Kung University