Temperature dependence of transverse magnetic focusing in high-mobility GaAs/AlGaAs
ORAL
Abstract
The temperature dependence of the ballistic and mesoscopic transport phenomenon of transverse magnetic focusing (TMF) is investigated in a two-dimensional electron system in a high-mobility GaAs/AlGaAs heterostructure at low temperatures 0.4 K < T < 20 K (electron mean free path ~ 80 μm at 4.2 K). Measurements use in-line configurations with distance between the injector and collector of L = 7 μm, and bent TMF configurations with L = 5 μm horizontal and 2 μm vertical. In both configurations, the TMF amplitude (non-local resistance Rf) shows a monotonic decrease as T is increased from 4 K to 20 K, according to Rf ∼1/T2. The dependence on T is analyzed by fitting Rf according to different scattering mechanisms, with Rf ∼1/T2 indicating a dominant role for inelastic electron-electron interactions. In the particular temperature range, electron-electron interactions point to the importance of momentum exchange between the ballistic beam and the surrounding carrier fluid, and hence to the existence of a hydrodynamic transport regime, which has recently received increasing attention. The experiments suggest that in addition to ballistic aspects, TMF presents hydrodynamic aspects as well.
*DOE DE-FG02-08ER46532
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Presenters
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Adbhut Gupta
- Virginia Tech