Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe<sub>2</sub>As<sub>2</sub>
ORAL
Abstract
In iron-based superconductors in-plane anisotropy of electrical resistivity in strain-detwinned samples strongly depends on residual resistivity [1]. The mechanism of the electronic transport responcible for sign change of in-plane resistivity anisotropy in hole-doped (Ba,K)Fe2As2 [2] attracts notable interest, since contributions from both elestic scattering due to impurities/defects and inelastic scattering on magnetic excitations and phonons can be anisotropic. We use irradiation with relativistic 2.5 MeV electrons at low temperatures to change residual resistivity and study the contribution of elastic scattering into anisotropic electronic transport.The modification of detwinning technique enabled measurements of the same samples before and after irradiation.
X Prefer Oral Session
[1] S. Ishida, et. al., Phys. Rev. B 84, 184514 (2011).
[2] E.C. Blomberg, et. al., Nature Comm. 4, 1914 (2013).
X Prefer Oral Session
[1] S. Ishida, et. al., Phys. Rev. B 84, 184514 (2011).
[2] E.C. Blomberg, et. al., Nature Comm. 4, 1914 (2013).
*This work was supported by the US DOE, Office of Science, BES Materials Science and Engineering Division under contract # DE-AC02-07CH11358. Work at SIRIUS facility at Ecole Polytechnique is supported by the EMIR network, proposal 16-2125.
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Presenters
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Makariy Tanatar
- Ames Laboratory
- Ames Laboratory US DOE, Ames, Iowa
- Ames Laboratory and Iowa State University, Ames, IA, USA
- Ames Laboratory and Department of Physics & Astronomy, Iowa State University, Ames, IA 50010, USA