Backbones of a Topological Qubit – High Quality Selective-Area Grown InSb Nanowire Networks using MBE
ORAL
Abstract
Nanowires (NW) made from III-V semiconductors are arguably the most mature platform for studying topological superconductivity and realizing Majorana bound states. So far progress on this front has been restricted to single NWs grown with conventional vapor-liquid-solid method. Although this growth mechanism is capable of producing free-standing NW crosses and hashtags, realization of more complex networks calls for an in-plane strategy to achieve new lithographically defined structures. Here, we implement such in-plane synthesis of InSb NW networks by selective area growth (SAG) using molecular-beam epitaxy (MBE). We perform structural and transport characterization to assess the crystal quality and electronic properties. The high quality of electron transport in InSb NWs and crosses are verified by both classical mobility and quantum transport measurements, with Hall mobility reaching 17,000 cm2/(V*s) and well-defined quantum point contact conductance plateaus at finite magnetic field. We also demonstrate phase coherent transport by studying Aharonov-Bohm interference in loops and induced superconductivity in an Al-covered sample. These results combined make InSb SAG a promising material platform for realizing a topological qubit.
*We acknolwedge Microsoft for funding support.
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Presenters
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Guanzhong Wang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology