Carrier density tuning in single layers of WS<sub>2</sub> via photochlorination

ORAL

Abstract

Monolayers of Transition Metal Dichalcogenides (TMDs) of the form MX2 (M=Mo or W and X=S or Se) are promising semiconducting materials for future 2D nanoelectronics due to their unique properties. Carrier modulation and doping reversibility are very important issues in the study of the electronic properties of TMDs and at the heart of many applications. We demonstrate electron density control in chlorine-doped WS2 monolayers by pulsed laser irradiation in a precursor gas atmosphere [1]. The increase of the photochlorination time gives rise to a systematic red-shift in the PL energy of the neutral exciton indicating a reduction in the electron density. This electron withdrawing process enabled also the determination of the trion binding energy of the intrinsic crystal, found to be 20 meV, in accordance to theoretical predictions. At the same time, it is found that the effect can be reversed upon cw laser rastering of the monolayer in air. SAM and XPS reveal that chlorine physisorption is responsible for the e-density modulation induced by the pulsed laser photochemical reaction process and confirmed by DFT calculations. [1] I. Demeridou et al, 2D Mater. 6 (2019), 015003

*This work is supported by the GSRT Greece under the project FLAG-ERA II - JTC2017 -GRFAR - GRAPH-EYE

Presenters

  • George Kioseoglou

    • Institute of Electronic Structure and Laser - FORTH, and University of Crete, Greece

Authors

  • George Kioseoglou

    • Institute of Electronic Structure and Laser - FORTH, and University of Crete, Greece
  • Ioanna Demeridou

    • Institute of Electronic Structure and Laser - FORTH, and University of Crete, Greece
  • Ioannis Paradisanos

    • Institute of Electronic Structure and Laser - FORTH, Greece
    • Institute of Electronic Structure and Laser - FORTH, and University of Crete, Greece
  • Panos Patsalas

    • Department of Physics, Aristotle University of Thessaloniki, Greece
  • Emmanuel Stratakis

    • Institute of Electronic Structure and Laser - FORTH, and University of Crete, Greece